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| NTE2369 (NPN) & NTE2370 (PNP) Silicon Complementary Transistors Digital w/2 Built-In 4.7k Bias Resistors Features: D Built-In Bias Resistor (R1 = 4.7k, R2 = 4.7k) D Small-Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit D Driver Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Collector Dissipation, PC NTE2369 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW NTE2370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +160C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICBO ICEO Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product NTE2369 NTE2370 Output Capacitance Cob VCB = 10V, f = 1MHz IEBO hFE fT Test Conditions VCB = 40V, IE = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 10V, IC = 5mA - - - 250 200 3.0 - - - MHz MHz pF Min - - 170 80 Typ - - 250 - Max 0.1 0.5 330 - Unit A A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Input OFF Voltage Input ON Voltage Input Resistance Input Resistance Ratio Symbol VCE(sat) Test Conditions IC = 5mA, IB = 0.25mA Min - 50 50 0.5 0.7 3.29 0.09 Typ 0.1 - - - - 4.7 0.1 Max 0.3 - - 0.8 1.3 6.11 0.11 Unit V V V V V k V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 100A, RBE = VI(off) VI(on) R1 R1/R2 VCE = 5V, IC = 100A VCE = 200mV, IC = 5mA Schematic Diagram Collector (Output) Collector (Output) R1 Base (Input) R2 Base (Input) R1 R2 Emitter (GND) Emitter (GND) NPN .165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max PNP ECB .050 (1.27) .050 (1.27) .035 (0.9) .102 (2.6) Max |
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